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Role of stresses in annealing of ion-implantation damage in Si
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This study showed that biaxial stresses created by ion implantation in silicon cause microscale plastic shear during annealing, which explains observed differences in defect recovery rates based on crystal orientation. The findings are relevant for controlling damage and stress in semiconductor fabrication.
Recent results showing a crystallographic orientation dependence of growth kinetics, secondary defects, and stress relief in annealing of ion-implanted Si are shown to be self-consistent if interpreted in terms of the influence of stresses upon annealing processes. The stress influence proposed is microplastic shear which is induced in [112] directions on (111) planes inclined to the implant surface by the biaxial stress created in the implant region by ion-implantation damage. The shear stresses are shown to be dependent on crystallographic orientation in a manner consistent with the model.
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X-ray and magnetic-field-enhanced change in physical characteristics of silicon crystals
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This physics study examined how low-dose X-ray radiation and magnetic fields change the mechanical and structural properties of silicon crystals by affecting dislocation behavior. This is a condensed matter physics study with no relevance to environmental microplastics.
Direct evidence for microplastic fracture in single-crystal silicon at ambient temperature
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High-resolution transmission electron microscopy was used to directly image a microcrack in silicon induced by Vickers indentation at room temperature, revealing two dislocations at the crack tip and atomic-scale steps on the crack surface. This is direct evidence that crack propagation in silicon involves localized plastic deformation, not purely brittle cleavage, at the crack tip.
Structure-Sensitive Properties of Materials Disclosed by a Combination of X-Ray Topography X-Ray Diffraction Analysis, and Electron Microscopy Methods
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This paper describes a combined suite of X-ray topography, diffraction analysis, and electron microscopy methods developed to establish correlations between lattice defects and structure-sensitive material properties. Applications included analysis of deformation in beryllium, germanium, and silicon crystals, and characterization of microplastic and elastic strain distributions around propagating cracks.
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