We can't find the internet
Attempting to reconnect
Something went wrong!
Hang in there while we get back on track
Ultrasound-induced surface hardening of dislocation-free silicon
AI summary Read the abstract
Ultrasonic treatment was found to create a hardened surface layer about 100 µm thick in dislocation-free silicon single crystals, accompanied by point-defect pileups at the surface. The results suggest that ultrasound activates surface defects that block dislocation motion, offering a potential method for surface strengthening of silicon components.
The effect of ultrasonic treatment on the microplastic properties of a near-surface layer in dislocation-free silicon single crystals was studied using [111]-oriented p-Si samples with artificial dislocation rosettes. The ultrasonic processing resulted in the formation of an approximately 100-µm-thick hardened near-surface layer and the emergence of point-defect pileups of the vacancy and/or vacancy-impurity cluster type on the sample surface. Possible mechanisms of the observed phenomena are discussed.
More Papers Like This
Numerical Simulation of Ultrasonic Surface Treatment
AI summary Read the abstract
A dynamic model of ultrasonic surface treatment was developed to describe how the microplastic strain accumulates as dislocations redistribute and new defects form during ultrasonic peening. The model links microscale dislocation behavior to the macroscopic residual stress and hardening introduced by the treatment, useful for optimizing surface strengthening processes.
X-ray and magnetic-field-enhanced change in physical characteristics of silicon crystals
AI summary Read the abstract
This physics study examined how low-dose X-ray radiation and magnetic fields change the mechanical and structural properties of silicon crystals by affecting dislocation behavior. This is a condensed matter physics study with no relevance to environmental microplastics.
Direct evidence for microplastic fracture in single-crystal silicon at ambient temperature
AI summary Read the abstract
High-resolution transmission electron microscopy was used to directly image a microcrack in silicon induced by Vickers indentation at room temperature, revealing two dislocations at the crack tip and atomic-scale steps on the crack surface. This is direct evidence that crack propagation in silicon involves localized plastic deformation, not purely brittle cleavage, at the crack tip.
Role of stresses in annealing of ion-implantation damage in Si
AI summary Read the abstract
This study showed that biaxial stresses created by ion implantation in silicon cause microscale plastic shear during annealing, which explains observed differences in defect recovery rates based on crystal orientation. The findings are relevant for controlling damage and stress in semiconductor fabrication.
Research digests by email
When a large batch of papers lands in the Atlas, we read through it and send a short write-up of what stood out.