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Ultrasound-induced surface hardening of dislocation-free silicon
Summary
Ultrasonic treatment was found to create a hardened surface layer about 100 µm thick in dislocation-free silicon single crystals, accompanied by point-defect pileups at the surface. The results suggest that ultrasound activates surface defects that block dislocation motion, offering a potential method for surface strengthening of silicon components.
The effect of ultrasonic treatment on the microplastic properties of a near-surface layer in dislocation-free silicon single crystals was studied using [111]-oriented p-Si samples with artificial dislocation rosettes. The ultrasonic processing resulted in the formation of an approximately 100-µm-thick hardened near-surface layer and the emergence of point-defect pileups of the vacancy and/or vacancy-impurity cluster type on the sample surface. Possible mechanisms of the observed phenomena are discussed.