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Elasticity and Inelasticity of Bulk GaN Crystals
Summary
This materials physics study used acoustic techniques to characterize the elastic and microplastic deformation properties of quasi-bulk GaN crystal samples grown by hydride vapor-phase epitaxy. Researchers compared polycrystalline and single-crystal samples and analyzed how dislocations and grain boundaries affect mechanical and acoustic properties. This is a semiconductor crystal physics study that uses microplasticity in an engineering context unrelated to environmental plastic pollution.
The elastic and microplastic properties of large quasi-bulk GaN samples of two types, grown by hydride vapor-phase epitaxy, have been acoustically investigated. Samples of the first type are polycrystals textured along a crystallographic direction, while second-type samples are single crystals with characteristic V-shaped defects. The results are compared with the data in the literature and analyzed based on the existing theoretical concepts of the influence of dislocations and grain boundaries on the acoustic and mechanical properties of crystals.