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An Ultrastable Porous Polyhedral Oligomeric Silsesquioxane/Tetraphenylthiophene Hybrid as a High-Performance Electrode for Supercapacitors

Molecules 2022 24 citations ? Citation count from OpenAlex, updated daily. May differ slightly from the publisher's own count. Score: 40 ? 0–100 AI score estimating relevance to the microplastics field. Papers below 30 are filtered from public browse.
Mohsin Ejaz, Mohamed Gamal Mohamed, Tao Chen, Santosh U. Sharma, Jyh‐Tsung Lee, Chih‐Feng Huang, Tao Chen, Tao Chen, Shiao‐Wei Kuo

Summary

Researchers synthesized three porous organic-inorganic polymer hybrids based on polyhedral oligomeric silsesquioxane, finding that the tetraphenylthiophene-containing variant achieved the highest specific capacitance at 354 F/g, making it a promising electrode material for high-performance supercapacitors.

In this study, we synthesized three hybrid microporous polymers through Heck couplings of octavinylsilsesquioxane (OVS) with 2,5-bis(4-bromophenyl)-1,3,4-oxadiazole (OXD-Br<sub>2</sub>), tetrabromothiophene (Th-Br<sub>4</sub>), and 2,5-bis(4-bromophenyl)-3,4-diphenylthiophene (TPTh-Br<sub>2</sub>), obtaining the porous organic-inorganic polymers (POIPs) POSS-OXD, POSS-Th, and POSS-TPTh, respectively. Fourier transform infrared spectroscopy and solid state <sup>13</sup>C and <sup>29</sup>Si NMR spectroscopy confirmed their chemical structures. Thermogravimetric analysis revealed that, among these three systems, the POSS-Th POIP possessed the highest thermal stability (T<sub>5</sub>: 586 °C; T<sub>10</sub>: 785 °C; char yield: 90 wt%), presumably because of a strongly crosslinked network formed between its OVS and Th moieties. Furthermore, the specific capacity of the POSS-TPTh POIP (354 F g<sup>-1</sup>) at 0.5 A g<sup>-1</sup> was higher than those of the POSS-Th (213 F g<sup>-1</sup>) and POSS-OXD (119 F g<sup>-1</sup>) POIPs. We attribute the superior electrochemical properties of the POSS-TPTh POIP to its high surface area and the presence of electron-rich phenyl groups within its structure.

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